Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere

Amorphous ITO thin films were deposited on silicon wafers at room temperature by RF + DC magnetron sputtering at water vapor partial pressures between 0 and 6 × 10 − 5  Torr. The O/(In + Sn) ratio was determined by Rutherford backscattering spectroscopy. The effect of water vapor on the thermal crys...

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Bibliographic Details
Published in:Thin solid films 2008-07, Vol.516 (17), p.5809-5813
Main Authors: Wang, M.H., Onai, Y., Hoshi, Y., Lei, H., Kondo, T., Uchida, T., Singkarat, S., Kamwanna, T., Dangtip, S., Aukkaravittayapun, S., Nishide, T., Tokiwa, S., Sawada, Y.
Format: Article
Language:English
Subjects:
Amorphous ITO film
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Electrical properties
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physical properties of thin films, nonelectronic
Physics
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thermal crystallization
Thermal stability
thermal effects
Thin film structure and morphology
Vapor phase epitaxy
growth from vapor phase
Water vapor
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Summary:Amorphous ITO thin films were deposited on silicon wafers at room temperature by RF + DC magnetron sputtering at water vapor partial pressures between 0 and 6 × 10 − 5  Torr. The O/(In + Sn) ratio was determined by Rutherford backscattering spectroscopy. The effect of water vapor on the thermal crystallization process was monitored by high-temperature X-ray diffraction (XRD) analysis. We found a simple dependence between the crystallization temperature and the water vapor partial pressure. After the high-temperature XRD, the films deposited at low water vapor pressures (2 × 10 − 5  Torr or lower) exhibited preferred orientation, whereas those deposited at high water vapor pressures (3 × 10 − 5  Torr or higher) exhibited preferred orientation. Introduction of water vapor during the deposition decreased carrier concentration and increased mobility. The carrier concentration after thermal crystallization was dependent on the water vapor partial pressure.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2007.10.041