The effect of the H2/(H2 + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition

To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H2/(H2 + A...

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Bibliographic Details
Published in:Thin solid films 2018-08, Vol.660, p.891-898
Main Authors: Fang, Taojun, Yamaki, Kenji, Koga, Kazunori, Yamashita, Daisuke, Seo, Hyunwoong, Itagaki, Naho, Shiratani, Masaharu, Takenaka, Kosuke, Setsuhara, Yuichi
Format: Article
Language:English
Subjects:
Amorphous hydrogenated carbon
Hydrogen content
Plasma-enhanced chemical vapor deposition
Surface roughness
Thin films
Toluene
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