Optical band-gap of InSb0.97Bi0.03 thin films

Nowadays, there has been extensive interest shown in infrared detectors operating in the 8–12 μm wavelength region wherein minimum atmospheric absorption is present. The more developed III-V materials are preferred to II-VI compounds. InSb, among the III-V semiconductors, has sufficiently narrow ban...

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Bibliographic Details
Published in:Vacuum 2018-08, Vol.154, p.49-51
Main Authors: Chaudhari, Ketan, Soni, P.H., Mahadik, Ashwini
Format: Article
Language:English
Subjects:
Absorbance
Band-gap
Film thickness
Size effect
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Summary:Nowadays, there has been extensive interest shown in infrared detectors operating in the 8–12 μm wavelength region wherein minimum atmospheric absorption is present. The more developed III-V materials are preferred to II-VI compounds. InSb, among the III-V semiconductors, has sufficiently narrow band-gap suitable in this regard. InSb crystallizes into the zinc-blende structure. However, the band-gap of InSb is considerably wide for Low Wavelength IR applications. The band-gap can be reduced by incorporation of Bi atoms into host InSb. Thin films of InSb0.97Bi0.03 were grown at room temperature on (001) NaCl crystal substrates under a pressure of 10−5 Pa using the thermal evaporation technique. The films obtained were characterized using FTIR absorption spectra. From the absorption data analysis, the band-gap is determined. It has been observed that Bi doping reduces the band-gap of InSb by a fair degree and, with film thickness the band-gap is found to change too. •InSb band-gap modification using Sb substitution with Bi within solubility range.•InSb0.97Bi0.03 film deposited on (001) NaCl substrates.•Film thickness dependence of band-gap.•Quantum size effect on band-gap.
ISSN:0042-207X
DOI:10.1016/j.vacuum.2018.04.051