Engineering the Surface Chemistry of Colloidal InP Quantum Dots for Charge Transport

• Published in: Chemistry of materials 2022-09, Vol.34 (18), p.8306-8315
• Main Authors: Zhao, Tianshuo, Zhao, Qinghua, Lee, Jaeyoung, Yang, Shengsong, Wang, Han, Chuang, Ming-Yuan, He, Yulian, Thompson, Sarah M., Liu, Guannan, Oh, Nuri, Murray, Christopher B., Kagan, Cherie R.
• Format: Article
• Language: English
• ISSN: 0897-4756; 1520-5002
• DOI: 10.1021/acs.chemmater.2c01840

Colloidal InP quantum dots (QDs) have emerged as potential candidates for constructing nontoxic QD-based optoelectronic devices. However, charge transport in InP QD thin-film assemblies has been limitedly explored. Herein, we report the synthesis of ∼8 nm edge length (∼6.5 nm in height), tetrahedral InP QDs and study charge transport in thin films using the platform of the field-effect transistor (FET). We design a hybrid ligand-exchange strategy that combines solution-based exchange with S2– and solid-state exchange with N3 – to enhance interdot coupling and control the n-doping of InP QD films. Further modifying the QD surface with thin, thermally evaporated Se overlayers yields FETs with an average electron mobility of 0.45 cm2 V–1 s–1, ∼10 times that of previously reported devices, and a higher on–off current ratio of 103–104. Analytical measurements suggest lower trap-state densities and longer carrier lifetimes in the Se-modified InP QD films, giving rise to a four-time longer carrier diffusion length.