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Ambipolar Charge Transport in Isoindigo-Based Donor–Acceptor Polymers
A series of donor–acceptor isoindigo (iI)-based copolymers synthesized with increasing numbers of thiophene rings in the repeat unit (from zero to three thiophene rings, including silole and germole-bridged fused bithiophene units) is applied toward solution-processed OFET devices. Differential puls...
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Published in: | Chemistry of materials 2016-03, Vol.28 (5), p.1286-1297 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A series of donor–acceptor isoindigo (iI)-based copolymers synthesized with increasing numbers of thiophene rings in the repeat unit (from zero to three thiophene rings, including silole and germole-bridged fused bithiophene units) is applied toward solution-processed OFET devices. Differential pulse voltammetry on thin films of the polymers recorded LUMO energy levels confined within a 0.1 eV range around 3.9 eV, while their bandgaps are estimated at 1.5 to 1.7 eV. The interchain π-stacking distance of each sample was evaluated from the 2D-WAXS diffraction patterns of annealed extruded filaments and the GIWAXS patterns of thin films, and were found to be all in the same range, between 3.65 and 3.75 Å for the thin films. Both p-type and n-type charge transport in thin film bottom gate, bottom contact transistor devices were recorded. In particular, the copolymer P(T-iI) containing one thiophene ring afforded well-balanced ambipolar p-type and n-type mobilities of 0.04 cm2/(V s) and 0.1 cm2/(V s), respectively. Under our processing conditions, the charge transport properties evolved from exclusively n-type to solely p-type as the number of thiophene rings within the repeat unit is increased to three rings in the case of P(T3-iI). This was observed despite all polymers displaying similar LUMO energy levels, interchain π-stacking distances, and microscopic thin film morphology (all face-on arrangement on the dielectric surface). This prompted a molecular-scale morphological analysis of P(T-iI) and P(T3-iI) in particular, using solid-state NMR spectroscopy in order to further investigate the stark difference in n-type mobilities between these two polymers. Using the complete assignment of solution 2D-NMR spectra of a thiophene-iI-thiophene model compound as guideline, the analysis of proton–carbon correlations in the solid-state 2D 13C{1H} FSLG-HETCOR NMR spectra of P(T-iI) and P(T3-iI) revealed differences in the molecular environment surrounding each iI unit. The latter suggests a stronger correlation of neighboring iI units in P(T-iI), whereas a stronger intermixing of iI and thiophenes prevails in P(T3-iI). We conclude that, in this study, the choice of the donor unit length within the primary structure of the D–A polymer can be responsible for hindering its n-type character. |
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ISSN: | 0897-4756 1520-5002 |
DOI: | 10.1021/acs.chemmater.5b03968 |