Performance Improvement of Conductive Bridging Random Access Memory by Electrode Alloying

Large parameter variability is identified as one of the main problems in conductive bridging random access memory (CBRAM) at the device level impeding large-scale commercial applications. Here, we achieve performance improvement by electrode alloying in sandwich-structure Ag65Cu35/HfO x /Pt devices....

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Bibliographic Details
Published in:Journal of physical chemistry. C 2020-05, Vol.124 (21), p.11438-11443
Main Authors: Qiao, Leilei, Sun, Yiming, Song, Cheng, Yin, Siqi, Wan, Qin, Liu, Jialu, Wang, Rui, Zeng, Fei, Pan, Feng
Format: Article
Language:English
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Summary:Large parameter variability is identified as one of the main problems in conductive bridging random access memory (CBRAM) at the device level impeding large-scale commercial applications. Here, we achieve performance improvement by electrode alloying in sandwich-structure Ag65Cu35/HfO x /Pt devices. Cu conductive filaments have been demonstrated to be responsible for the resistive switching behaviors in Ag–Cu alloy electrode CBRAM via direct observation by transmission electron microscopy. Compared with Cu/HfO x /Pt devices, the alloy electrode devices show lower forming and SET voltages, better SET voltage distribution uniformity, and a faster response speed. The alloy phase diagram combined with the galvanic effect is proposed to explain the formation of Cu conductive filaments and the improved switching uniformity in CBRAM with an Ag–Cu alloy electrode. The use of an Ag–Cu alloy electrode and understanding its role would advance the implementation of high-density integration of CBRAM.
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.0c01785