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Effect of Electronically Distinct Aromatic Substituents on the Molecular Assembly and Hole Transport of V‑Shaped Organic Semiconductors
Bent-shaped p-type organic semiconductors (OSCs) have demonstrated high hole-carrier mobilities and thermal durability for practical electronic applications, among which, the V-shaped thieno[3,2-f:4,5-f’]bis[1]benzothiophene (TBBT–V) π-electron core shows excellent electronic features for hole t...
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Published in: | Journal of physical chemistry. C 2020-08, Vol.124 (32), p.17503-17511 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Bent-shaped p-type organic semiconductors (OSCs) have demonstrated high hole-carrier mobilities and thermal durability for practical electronic applications, among which, the V-shaped thieno[3,2-f:4,5-f’]bis[1]benzothiophene (TBBT–V) π-electron core shows excellent electronic features for hole transports, and the fused terminal thiophene units allow facile substitution with various substituents for fine-tuning OSC properties. Herein, we investigate the effect of TBBT–V functionalized with three electronically distinct aromatic substituents (phenyl, thienyl, and thiazolyl) on their molecular assemblies and charge-transporting capabilities. The phenyl-substituted TBBT–V (Ph–TBBT–V) forms the herringbone packing motif, with effective calculated intermolecular orbital overlaps and two-dimensional-like charge transport. On the other hand, poor charge-transporting capabilities are estimated for thienyl- and thiazolyl-substituted TBBT–V. As a result, Ph–TBBT–V, with the best estimated charge-transporting capability, exhibits an excellent air-stable hole mobility up to 6.5 cm2 V–1 s–1, whereas the other two derivatives show orders of lower mobilities, which are in good agreement with our theoretical estimations. |
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ISSN: | 1932-7447 1932-7455 |
DOI: | 10.1021/acs.jpcc.0c04088 |