Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS 2

Structuring materials with atomic precision is the ultimate goal of nanotechnology and is becoming increasingly relevant as an enabling technology for quantum electronics/spintronics and quantum photonics. Here, we create atomic defects in monolayer MoS by helium ion (He-ion) beam lithography with a...

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Bibliographic Details
Published in:Nano letters 2020-06, Vol.20 (6), p.4437-4444
Main Authors: Mitterreiter, Elmar, Schuler, Bruno, Cochrane, Katherine A, Wurstbauer, Ursula, Weber-Bargioni, Alexander, Kastl, Christoph, Holleitner, Alexander W
Format: Article
Language:English
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Summary:Structuring materials with atomic precision is the ultimate goal of nanotechnology and is becoming increasingly relevant as an enabling technology for quantum electronics/spintronics and quantum photonics. Here, we create atomic defects in monolayer MoS by helium ion (He-ion) beam lithography with a spatial fidelity approaching the single-atom limit in all three dimensions. Using low-temperature scanning tunneling microscopy (STM), we confirm the formation of individual point defects in MoS upon He-ion bombardment and show that defects are generated within 9 nm of the incident helium ions. Atom-specific sputtering yields are determined by analyzing the type and occurrence of defects observed in high-resolution STM images and compared with Monte Carlo simulations. Both theory and experiment indicate that the He-ion bombardment predominantly generates sulfur vacancies.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.0c01222