Visualization of Local Conductance in MoS 2 /WSe 2 Heterostructure Transistors

• Published in: Nano letters 2019-03, Vol.19 (3), p.1976-1981
• Main Authors: Wu, Di, Li, Wei, Rai, Amritesh, Wu, Xiaoyu, Movva, Hema C P, Yogeesh, Maruthi N, Chu, Zhaodong, Banerjee, Sanjay K, Akinwande, Deji, Lai, Keji
• Format: Article
• Language: English
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.8b05159

The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influences the band structure of the heterostructures, resulting in novel properties that can be utilized for electronic and optoelectronic applications. Based on microwave microscopy studies, we report quantitative electrical imaging on gated molybdenum disulfide (MoS )/tungsten diselenide (WSe ) heterostructure devices, which exhibit an intriguing antiambipolar effect in their transfer characteristics. Interestingly, in the region with significant source-drain current, electrons in the n-type MoS and holes in the p-type WSe segments are nearly balanced, whereas the heterostructure area is depleted of mobile charges. The spatial evolution of local conductance can be ascribed to the lateral band bending and formation of depletion regions along the line of MoS -heterostructure-WSe . Our work vividly demonstrates the microscopic origin of novel transport behaviors, which is important for the vibrant field of vdW heterojunction research.