Atomic-Layer-Deposited SiO x /SnO x Nanolaminate Structure for Moisture and Hydrogen Gas Diffusion Barriers

• Published in: ACS applied materials & interfaces 2021-08, Vol.13 (33), p.39584-39594
• Main Authors: Han, Ju-Hwan, Lee, Seong-Hyeon, Jeong, Seok-Goo, Kim, Dong-Yeon, Yang, Hae Lin, Lee, Seunghwan, Yoo, Seung Yeon, Park, Inho, Park, Ho Bum, Lim, Kwang-Su, Yang, Won-Jae, Choi, Hyun-Chul, Park, Jin-Seong
• Format: Article
• Language: English
• Subjects: Functional Inorganic Materials and Devices
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.1c09901

High-density SnO x and SiO x thin films were deposited via atomic layer deposition (ALD) at low temperatures (100 °C) using tetrakis­(dimethylamino)­tin­(IV) (TDMASn) and di-isopropylaminosilane (DIPAS) as precursors and hydrogen peroxide (H2O2) and O2 plasma as reactants, respectively. The thin-film encapsulation (TFE) properties of SnO x and SiO x were demonstrated with thickness dependence measurements of the water vapor transmission rate (WVTR) evaluated at 50 °C and 90% relative humidity, and different TFE performance tendencies were observed between thermal and plasma ALD SnO x . The film density, crystallinity, and pinholes formed in the SnO x film appeared to be closely related to the diffusion barrier properties of the film. Based on the above results, a nanolaminate (NL) structure consisting of SiO x and SnO x deposited using plasma-enhanced ALD was measured using WVTR (H2O molecule diffusion) at 2.43 × 10–5 g/m2 day with a 10/10 nm NL structure and time-lag gas permeation measurement (H2 gas diffusion) for applications as passivation layers in various electronic devices.