F‑doping-Enhanced Carrier Transport in the SnO2/Perovskite Interface for High-Performance Perovskite Solar Cells
SnO2 is widely used as the electron transport layer (ETL) in n–i–p perovskite solar cells. However, the deep-level defects at the interface between SnO2 and the perovskite film will lead to energy loss, reducing the open-circuit voltage. Therefore, the interface optimization is essential to raise th...
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| Published in: | ACS applied materials & interfaces 2022-09, Vol.14 (37), p.42093-42101 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
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