Achieving High Thermoelectric Performance in ZnSe-Doped CuGaTe 2 by Optimizing the Carrier Concentration and Reducing Thermal Conductivity

• Published in: ACS applied materials & interfaces 2024-04, Vol.16 (13), p.16253-16260
• Main Authors: Luo, Sitong, Zhang, Zipei, Yu, Lu, Wei, Sitong, Ji, Zhen, Liang, Jingxuan, Wei, Zhibo, Song, Weiyu, Zheng, Shuqi
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.4c00455

The CuGaTe thermoelectric material has garnered widespread attention as an inexpensive and nontoxic material for mid-temperature thermoelectric applications. However, its development has been hindered by its low intrinsic carrier concentration and high thermal conductivity. This study investigates the band structure and thermoelectric properties of (CuGaTe ) (ZnSe) ( = 0, 0.25%, 0.5%, 1%, 1.5%, and 2%). The research revealed that the incorporation of Zn and Se atoms enhanced the level of band degeneracy and electron density of states near Fermi level, significantly raising carrier concentration through the formation of point defects. Simultaneously, when the doping content reached 1.5%, the ZnTe second phase emerged, collaborating with point defects and high-density dislocations, effectively scattering phonons and substantially reducing lattice thermal conductivity. Therefore, introducing ZnSe can simultaneously optimize the material's electrical and thermal transport properties. The (CuGaTe ) (ZnSe) sample reaches peak ZT of 1.32 at 823 K, representing a 159% increase compared to pure CuGaTe .