Electron Transport across Vertical Silicon/MoS 2 /Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

• Published in: ACS applied materials & interfaces 2020-02, Vol.12 (8), p.9656-9663
• Main Authors: Belete, Melkamu, Engström, Olof, Vaziri, Sam, Lippert, Gunther, Lukosius, Mindaugas, Kataria, Satender, Lemme, Max C
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.9b21691

Heterostructures comprising silicon, molybdenum disulfide (MoS ), and graphene are investigated with respect to the vertical current conduction mechanism. The measured current-voltage ( - ) characteristics exhibit temperature-dependent asymmetric current, indicating thermally activated charge carrier transport. The data are compared and fitted to a current transport model that confirms thermionic emission as the responsible transport mechanism across devices. Theoretical calculations in combination with the experimental data suggest that the heterojunction barrier from Si to MoS is linearly temperature-dependent for = 200-300 K with a positive temperature coefficient. The temperature dependence may be attributed to a change in band gap difference between Si and MoS , strain at the Si/MoS interface, or different electron effective masses in Si and MoS , leading to a possible entropy change stemming from variation in density of states as electrons move from Si to MoS . The low barrier formed between Si and MoS and the resultant thermionic emission demonstrated here make the present devices potential candidates as the emitter diode of graphene base hot electron transistors for future high-speed electronics.