Room-Temperature Group-IV LED Based on Defect-Enhanced Ge Quantum Dots

• Published in: ACS photonics 2018-02, Vol.5 (2), p.431-438
• Main Authors: Rauter, Patrick, Spindlberger, Lukas, Schäffler, Friedrich, Fromherz, Thomas, Freund, Julia, Brehm, Moritz
• Format: Article
• Language: English
• ISSN: 2330-4022; 2330-4022
• DOI: 10.1021/acsphotonics.7b00888

As recently demonstrated, defect-enhanced Ge quantum dots (Ge-DEQDs) in a crystalline Si matrix can be employed as CMOS-compatible gain material in optically pumped lasers. Due to the stability of their optical properties up to temperatures beyond 300 K, the Ge-DEQD system is a highly promising candidate for the realization of an electrically pumped group-IV laser source for integration in a monolithic optoelectronic platform fit for room-temperature operation. We report on the realization of light-emitting diodes based on Ge-DEQDs operating at telecom wavelengths and above room temperature. The DEQD electroluminescence characteristics were studied spectrally resolved as a function of driving current and device temperature. The experimental results show that the excellent optical properties of Ge-DEQDs are maintained under electrical pumping at high current densities and at device temperatures of at least 100 °C. Furthermore, the emission intensity scales with the number of quantum dot layers embedded into the p-i-n diode structures, thus, indicating the scalability of the approach for large gain material volumes. The presented results form an essential step toward the future demonstration of a CMOS-compatible, electrically pumped room-temperature laser based on Ge-DEQDs.