Tuning Electrochemical Rectification via Quantum Dot Assemblies

• Published in: Journal of the American Chemical Society 2010-12, Vol.132 (47), p.16855-16861
• Main Authors: Kissling, Gabriela P, Bünzli, Christa, Fermín, David J
• Format: Article
• Language: English
• ISSN: 0002-7863; 1520-5126
• DOI: 10.1021/ja106149g

A novel approach to tuning electrochemical rectification using 2D assemblies of quantum dots (QDs) is presented. Asymmetric enhancement of the oxidation and reduction currents in the presence of the Fe(CN)6 3−/4− redox couple is observed upon adsorption of QDs at thiol-modified Au electrodes. The extent of the electrochemical rectification is dependent on the average QD size. A molecular blocking layer is generated by self-assembling 11-mercaptoundecanoic acid (MUA) and an ultrathin film of poly(diallyldimethylammonium chloride) (PDADMAC) on the electrode. The polycationic film allows the electrostatic adsorption of 3-mercaptopropionic acid (MPA)-stabilized CdTe QDs, generating 2D assemblies with approximately 0.4% coverage. The QD adsorption activates a fast charge transfer across the blocking layer in which the reduction process is more strongly enhanced than the oxidation reaction. The partial electrochemical rectification is rationalized in terms of the relative position of the valence (VB) and conduction band (CB) edges with respect to the redox Fermi energy (εredox). Quantitative analysis of the exchange current density obtained from electrochemical impedance spectroscopy demonstrates that the enhancement of charge transport across the molecular barrier is strongly dependent on the position of the QD valence band edge relative to εredox. The average electron tunneling rate constant through the QD assemblies is estimated on the basis of the Gerischer model for electron transfer.