Application of the Hall Effect in a Semi-conductor to the Measurement of Power in an Electromagnetic Field

IT is well known that if, in a piece of semi-conductor such as germanium or silicon, a magnetic field is set up along the z -axis, as defined by a Cartesian coordinate system, with current flow at right angles along the y -axis, then an electromotive force appears, due to the Hall effect 1 along the...

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Bibliographic Details
Published in:Nature (London) 1954-01, Vol.173 (4392), p.41-42
Main Author: BARLOW, H. M
Format: Article
Language:English
Subjects:
Humanities and Social Sciences
letter
multidisciplinary
Science
Science (multidisciplinary)
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Summary:IT is well known that if, in a piece of semi-conductor such as germanium or silicon, a magnetic field is set up along the z -axis, as defined by a Cartesian coordinate system, with current flow at right angles along the y -axis, then an electromotive force appears, due to the Hall effect 1 along the x -axis. This electromotive force at any instant is given by: where B is instantaneous flux density in gauss; I c is instantaneous current in amperes ; R is Hall coefficient in volt. cm. per ampere gauss (for ‘n’ type germanium R has a value of about 8 × 10 −5 ) ; and t is thickness in cm. along the z -axis of the sample of material exhibiting the Hall effect. The particular virtue of a semi-conductor like germanium or silicon for this purpose is that it possesses a comparatively large Hall coefficient and allows a substantial penetration of the field into the material even at ultra-high frequencies.
ISSN:0028-0836
1476-4687
DOI:10.1038/173041a0