Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering

Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic factors such as charged impurities, structural defects and tr...

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Published in:Nature communications 2014-10, Vol.5 (1), p.5290, Article 5290
Main Authors: Yu, Zhihao, Pan, Yiming, Shen, Yuting, Wang, Zilu, Ong, Zhun-Yong, Xu, Tao, Xin, Run, Pan, Lijia, Wang, Baigeng, Sun, Litao, Wang, Jinlan, Zhang, Gang, Zhang, Yong Wei, Shi, Yi, Wang, Xinran
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Language:English
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