Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering
Molybdenum disulfide is considered as one of the most promising two-dimensional semiconductors for electronic and optoelectronic device applications. So far, the charge transport in monolayer molybdenum disulfide is dominated by extrinsic factors such as charged impurities, structural defects and tr...
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| Published in: | Nature communications 2014-10, Vol.5 (1), p.5290, Article 5290 |
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| Main Authors: | , , , , , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Request full text |
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