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One-step electrodeposited MoS 2 @Ni-mesh electrode for flexible and transparent asymmetric solid-state supercapacitors
Transparent and flexible energy-storage devices have currently gained a lot of attention as wearable and portable electronics. Herein, we develop a one-step electrodeposited MoS 2 nanosheet@Ni-mesh core–shell network nanostructure as a transparent negative electrode for the flexible and transparent...
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Published in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2020-11, Vol.8 (45), p.24040-24052 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Transparent and flexible energy-storage devices have currently gained a lot of attention as wearable and portable electronics. Herein, we develop a one-step electrodeposited MoS
2
nanosheet@Ni-mesh core–shell network nanostructure as a transparent negative electrode for the flexible and transparent asymmetric solid-state supercapacitor (FT-ASSc). In the fabricated core–shell nanosheet network architecture, the junctionless interconnected Ni-mesh network with excellent conductivity contributes to superior electron transport pathways, and the nanostructure of the MoS
2
over the Ni-mesh provides effective interface contact between the active material and current collector. As a result, the MoS
2
@Ni-mesh network negative electrode provides an areal capacitance of 7.31 mF cm
−2
at the scan rate of 10 mV s
−1
with an 80% capacity retention rate after 5000 GCD cycles. Moreover, the fabricated FT-ASSc with a transmittance of 51% can operate up to a maximum working potential window of 1.6 V and also provide a maximum volumetric capacitance of 48.32 mF cm
−3
at 0.4 mA cm
−3
current density. This work might provide a new strategy for improving the electrochemical performance of transparent and flexible energy-storage devices for next-generation integrated electronic gadgets. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/D0TA07764J |