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Asymmetrically flexoelectric gating effect of Janus transition-metal dichalcogenides and their sensor applications
High-performance nanodevices require fast and reversible tunability of electronic and optical properties under external stimuli. In the current work, using first-principles simulations and non-equilibrium Green function transport calculations, we demonstrate that bending can effectively and asymmetr...
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Published in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-09, Vol.8 (33), p.11457-11467 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | High-performance nanodevices require fast and reversible tunability of electronic and optical properties under external stimuli. In the current work, using first-principles simulations and non-equilibrium Green function transport calculations, we demonstrate that bending can effectively and asymmetrically modulate the optoelectronic properties of Janus transition-metal dichalcogenides (J-TMDCs), due to their out-of-plane flexoelectric gating. The dynamic correlation of the electronic and optical behaviors is revealed by the bending-induced interplay between the quantum confined giant Stark effect and deformation potential. The nonsymmetric directional-information encoded in the concave and convex bending motions and the intrinsic dipole of the atomically thin film renders J-TMDCs promising for wearable motion sensors and chemical sensors.
Janus transition-metal dichalcogenides are promising for wearable motion sensors and chemical sensors due to the nonsymmetric directional information upon bending. |
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ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/d0tc02610g |