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Asymmetrically flexoelectric gating effect of Janus transition-metal dichalcogenides and their sensor applications

High-performance nanodevices require fast and reversible tunability of electronic and optical properties under external stimuli. In the current work, using first-principles simulations and non-equilibrium Green function transport calculations, we demonstrate that bending can effectively and asymmetr...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-09, Vol.8 (33), p.11457-11467
Main Authors: Dou, Kun Peng, Hu, Hui Hui, Wang, XiaoHan, Wang, XinYi, Jin, Hao, Zhang, Guang-Ping, Shi, Xing-Qiang, Kou, Liangzhi
Format: Article
Language:English
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Summary:High-performance nanodevices require fast and reversible tunability of electronic and optical properties under external stimuli. In the current work, using first-principles simulations and non-equilibrium Green function transport calculations, we demonstrate that bending can effectively and asymmetrically modulate the optoelectronic properties of Janus transition-metal dichalcogenides (J-TMDCs), due to their out-of-plane flexoelectric gating. The dynamic correlation of the electronic and optical behaviors is revealed by the bending-induced interplay between the quantum confined giant Stark effect and deformation potential. The nonsymmetric directional-information encoded in the concave and convex bending motions and the intrinsic dipole of the atomically thin film renders J-TMDCs promising for wearable motion sensors and chemical sensors. Janus transition-metal dichalcogenides are promising for wearable motion sensors and chemical sensors due to the nonsymmetric directional information upon bending.
ISSN:2050-7526
2050-7534
DOI:10.1039/d0tc02610g