Loading…

Stable hydrogen-bonded organic frameworks for selective fluorescence detection of Al 3+ and Fe 3+ ions

Four new hydrogen-bonded organic frameworks (HOFs) with the formulas {[H 4 TCPE·bpa]·(CH 3 OH·H 2 O)} n (1), {[H 4 TCPE·bpe]·(CH 3 OH·0.56H 2 O)} n (2), {[H 4 TCPE·bpa]·CH 3 OH} n (3) and {[H 4 TCPE·bpe]·(0.41CH 3 OH·0.59CH 3 CN)} n (4) (H 4 TCPE = tetrakis(4-carboxyphenyl)ethylene, bpa = 1,2-bis(4-...

Full description

Saved in:
Bibliographic Details
Published in:CrystEngComm 2021-12, Vol.23 (47), p.8334-8342
Main Authors: Xiao, Cheng-Quan, Yi, Wen-Hai, Hu, Jun-Jie, Liu, Sui-Jun, Wen, He-Rui
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Four new hydrogen-bonded organic frameworks (HOFs) with the formulas {[H 4 TCPE·bpa]·(CH 3 OH·H 2 O)} n (1), {[H 4 TCPE·bpe]·(CH 3 OH·0.56H 2 O)} n (2), {[H 4 TCPE·bpa]·CH 3 OH} n (3) and {[H 4 TCPE·bpe]·(0.41CH 3 OH·0.59CH 3 CN)} n (4) (H 4 TCPE = tetrakis(4-carboxyphenyl)ethylene, bpa = 1,2-bis(4-pyridyl)ethane, bpe = 1,2-bis(4-pyridyl)ethylene) have been prepared under different conditions and structurally characterized. X-ray crystallographic analysis reveals that the hydrogen bond strengths of 3 and 4 synthesized by solvothermal method are much stronger than those of 1 and 2 prepared by the volatilization method. An obvious fluorescence shift was observed during the sensing process of 3 and 4 toward Al 3+ and Fe 3+ ions. For HOF 3, a red-shift emission ( ca. 28 nm) occurs upon the addition of Al 3+ ion. When Al 3+ ion is added to HOF 4 in acetonitrile suspension, a red-shift emission ( ca. 30 nm) as well as a great fluorescence enhancement happens. Both 3 and 4 exhibit strong fluorescence quenching with high selectivity and sensitivity toward Fe 3+ ion. In addition, they display relatively good stabilities as well as reusability. Therefore, HOFs 3 and 4 are excellent fluorescent sensors toward Al 3+ and Fe 3+ ions.
ISSN:1466-8033
1466-8033
DOI:10.1039/D1CE01182K