Mo doping and Se vacancy engineering for boosting electrocatalytic water oxidation by regulating the electronic structure of self-supported Co 9 Se 8 @NiSe

Oxygen evolution reactions (OERs) are regarded as the rate-determining step of electrocatalytic overall water splitting, which endow OER electrocatalysts with the advantages of high activity, low cost, good conductivity, and excellent stability. Herein, a facile H O -assisted etching method is propo...

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Published in:Nanoscale 2022-12, Vol.15 (1), p.259-265
Main Authors: Tian, Lin, Chen, Zhenyang, Wang, Tingjian, Cao, Ming, Lu, Xinhua, Cheng, Wenjing, He, Changchun, Wang, Ju, Li, Zhao
Format: Article
Language:English
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Summary:Oxygen evolution reactions (OERs) are regarded as the rate-determining step of electrocatalytic overall water splitting, which endow OER electrocatalysts with the advantages of high activity, low cost, good conductivity, and excellent stability. Herein, a facile H O -assisted etching method is proposed for the fabrication of Mo-doped ultrathin Co Se @NiSe/NF-X heterojunctions with rich Se vacancies to boost electrocatalytic water oxidation. After step-by-step electronic structure modulation by Mo doping and Se vacancy engineering, the self-standing Mo-Co Se @NiSe/NF-60 heterojunctions deliver a current density of 50 mA cm with an overpotential of 343 mV and a cell voltage of only 1.87 V at 50 mA cm for overall water splitting in 1.0 M KOH. Our study opens up the possibility of realizing step-by-step electronic structure modulation of nonprecious OER electrocatalysts heteroatom doping and vacancy engineering.
ISSN:2040-3364
2040-3372
DOI:10.1039/d2nr05410h