Graphene memristors based on humidity-mediated reduction of graphene oxide

• Published in: Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2023-02, Vol.11 (5), p.169-1695
• Main Authors: Haghshenas Gorgabi, Fatemeh, Morant-Miñana, Maria C, Zafarkish, Haniyeh, Abbaszadeh, Davood, Asadi, Kamal
• Format: Article
• Language: English
• Subjects: Devices; Graphene; Memristors; Reduction (metal working); Switching; Thin films
• ISSN: 2050-7526; 2050-7534
• DOI: 10.1039/d2tc04632f

Memristors have emerged as promising devices for neuromorphic applications, particularly as synaptic weight. Graphene oxide, a partially oxidised and electrically insulating form of graphene, has been employed in metal/insulator/metal devices, where resistance switching based on the filamentary growth of the contacting metals has been demonstrated. Here we demonstrate an alternative highly reproducible resistance switching mechanism based on solid-state reduction of GO thin-films mediated by adsorbed water. It is shown that distinguishable and highly stable resistance states can be controllably realised in graphene oxide metal/insulator/metal devices. We have unravelled the growth mechanism and determined the growth kinetic of reduced graphene oxide, which enables a deterministic way to tune the resistance in GO devices. The demonstration of highly reproducible memristors based on graphene oxide crossbar devices is very promising for the realisation of low-cost and environmentally benign solution-processable neuromorphic synaptic weight. Humidity-mediated electrochemical reduction of graphene oxide yields memristors with controllable and highly stable resistance states that can be used in multibit memory applications. The obtained kinetic, enables a predictive resistance setting.