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Ultrahigh energy storage in multilayer BiFeO 3 –BaTiO 3 –NaTaO 3 relaxor ferroelectric ceramics
The rising challenge of high-density electric energy storage has accelerated the research of electric energy-storage capacitors due to their high power density and voltage resistance, excellent temperature stability, and environmental friendliness. However, lead-free ferroelectric capacitors general...
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Published in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2024-11, Vol.12 (44), p.30642-30654 |
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Main Authors: | , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | The rising challenge of high-density electric energy storage has accelerated the research of electric energy-storage capacitors due to their high power density and voltage resistance, excellent temperature stability, and environmental friendliness. However, lead-free ferroelectric capacitors generally have a low discharge energy density. This study used a multilayer ceramic capacitor (MLCC) design with active ceramic layers of relaxor ferroelectric NaTaO 3 -modified BiFeO 3 –BaTiO 3 co-sintered with 90Ag/10Pd interlayer electrodes. Superb recoverable energy densities of W rec ∼2.8 J cm −3 with an energy efficiency of η ∼73% at 400 kV cm −1 and W rec ∼4.5 J cm −3 with an energy efficiency of η ∼77% at 450 kV cm −1 were attained, respectively, in 9-active-ceramic-layer and 24-active-ceramic-layer MLCCs. Excellent thermal stability and fatigue resistance of energy storage capability were achieved up to 180 °C and exceeding 1 × 10 4 cycles. The ultrahigh energy-storage properties can be linked to the synergistic effects of multiple local lattice distortions, nanoscale structures, and interfacial E fields at grain boundaries. This report demonstrates an efficient scheme to utilize ternary BiFeO 3 –BaTiO 3 -based ceramics via the MLCC technology for ultrahigh-energy-density electrostatic energy storage. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/D4TA04324C |