Dissociation energies of acceptor-hydrogen complexes in InP

The dissociation energies of Zn-H, Cd-H, and Mg-H complexes in p-InP have been determined from the reactivation kinetics of these passivated dopants in reverse-biased Au Schottky diodes. The reactivation process is first order under these conditions, yielding thermal dissociation energies of 1.20±0....

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Bibliographic Details
Published in:Applied physics letters 1992-09, Vol.61 (13), p.1588-1590
Main Authors: PEARTON, S. J, HOBSON, W. S, ABERNATHY, C. R
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states
Exact sciences and technology
Impurity and defect levels
Physics
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Summary:The dissociation energies of Zn-H, Cd-H, and Mg-H complexes in p-InP have been determined from the reactivation kinetics of these passivated dopants in reverse-biased Au Schottky diodes. The reactivation process is first order under these conditions, yielding thermal dissociation energies of 1.20±0.10 eV for Zn acceptors, 1.40±0.10 eV for Cd acceptors, and 1.35±0.10 eV for Mg acceptors. These results are consistent with the model in which the hydrogen passivates the acceptor by attaching to a neighboring P atom, leaving the acceptor essentially threefold coordinated. They also indicate that acceptor-hydrogen retrapping during cool down after epitaxial growth of p-InP layers is the primary cause of apparently stable acceptor passivation seen in such layers.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.107505