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Magnetoresistance in magnetic manganese oxide with intrinsic antiferromagnetic spin structure

Giant and isotropic magnetoresistance as huge as −53% was observed in magnetic manganese oxide La0.72Ca0.25MnOz films with an intrinsic antiferromagnetic spin structure. We ascribe this magnetoresistance to spin-dependent electron scattering due to spin canting of the manganese oxide.

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Published in:Applied physics letters 1993-10, Vol.63 (14), p.1990-1992
Main Authors: CHAHARA, K.-I, OHNO, T, KASAI, M, KOZONO, Y
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Language:English
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cited_by cdi_FETCH-LOGICAL-c256t-eac57853c9ca91cdf1aa7ad54e38a6a127c4468fedce4d0ee0e732fc64d502f63
cites cdi_FETCH-LOGICAL-c256t-eac57853c9ca91cdf1aa7ad54e38a6a127c4468fedce4d0ee0e732fc64d502f63
container_end_page 1992
container_issue 14
container_start_page 1990
container_title Applied physics letters
container_volume 63
creator CHAHARA, K.-I
OHNO, T
KASAI, M
KOZONO, Y
description Giant and isotropic magnetoresistance as huge as −53% was observed in magnetic manganese oxide La0.72Ca0.25MnOz films with an intrinsic antiferromagnetic spin structure. We ascribe this magnetoresistance to spin-dependent electron scattering due to spin canting of the manganese oxide.
doi_str_mv 10.1063/1.110624
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ispartof Applied physics letters, 1993-10, Vol.63 (14), p.1990-1992
issn 0003-6951
1077-3118
language eng
recordid cdi_crossref_primary_10_1063_1_110624
source AIP Digital Archive
subjects Antiferromagnetics
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport phenomena in thin films and low-dimensional structures
Exact sciences and technology
Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
Magnetic properties and materials
Physics
Studies of specific magnetic materials
title Magnetoresistance in magnetic manganese oxide with intrinsic antiferromagnetic spin structure
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