Electrically detected magnetic resonance study of stress-induced leakage current in thin SiO2

A spin-dependent trap-assisted tunneling current has been detected in a thin (44.5 Å) SiO2 film. An electron paramagnetic resonance signal, obtained from the tunnel current, provides the first microscopic information regarding the identity of defects responsible for stress-induced leakage currents i...

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Bibliographic Details
Published in:Applied physics letters 1996-03, Vol.68 (12), p.1669-1671
Main Author: Stathis, J. H.
Format: Article
Language:English
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Summary:A spin-dependent trap-assisted tunneling current has been detected in a thin (44.5 Å) SiO2 film. An electron paramagnetic resonance signal, obtained from the tunnel current, provides the first microscopic information regarding the identity of defects responsible for stress-induced leakage currents in thin SiO2. The observed electrically detected magnetic resonance spectrum is anisotropic and does not correspond to any of the commonly known defects in the Si/SiO2 system. The change in current is 2.4±0.3×10−7 at resonance, which we explain in terms of a spin-dependent hopping process. Assuming that the signal corresponds to traps in the oxide, we estimate sensitivity to ∼1×109 defects/cm2.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.115900