Indium contamination from the indium–tin–oxide electrode in polymer light-emitting diodes

We have found that polymer light-emitting diodes (LEDs) contain high concentrations of metal impurities prior to operation. Narrow peaks in the electroluminescence spectrum unambiguously demonstrate the presence of atomic indium and aluminum. Rutherford backscattering spectroscopy (RBS) and x-ray ph...

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Bibliographic Details
Published in:Applied physics letters 1996-09, Vol.69 (12), p.1764-1766
Main Authors: Schlatmann, A. R., Floet, D. Wilms, Hilberer, A., Garten, F., Smulders, P. J. M., Klapwijk, T. M., Hadziioannou, G.
Format: Article
Language:English
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Summary:We have found that polymer light-emitting diodes (LEDs) contain high concentrations of metal impurities prior to operation. Narrow peaks in the electroluminescence spectrum unambiguously demonstrate the presence of atomic indium and aluminum. Rutherford backscattering spectroscopy (RBS) and x-ray photoelectron spectroscopy (XPS) depth profiling data corroborate this result. An average indium concentration of 5×1019atoms/cm3 originating from the indium–tin–oxide (ITO) electrode has been found in the polymer layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.117478