Oxygen incorporation in thin films of In2O3:Sn prepared by radio frequency sputtering

Polycrystalline In2O3:Sn (ITO) films have been prepared by reactive radio frequency diode sputtering of an oxidic target using various oxygen/argon mixtures. They mostly contain more oxygen than the ideal crystal. When deposited at low pressure, the crystals have an expanded lattice (up to 3.5%) and...

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Bibliographic Details
Published in:Journal of applied physics 2000-09, Vol.88 (5), p.2437-2442
Main Authors: Mergel, D., Stass, W., Ehl, G., Barthel, D.
Format: Article
Language:English
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Summary:Polycrystalline In2O3:Sn (ITO) films have been prepared by reactive radio frequency diode sputtering of an oxidic target using various oxygen/argon mixtures. They mostly contain more oxygen than the ideal crystal. When deposited at low pressure, the crystals have an expanded lattice (up to 3.5%) and, for small oxygen addition to the sputter gas, are also denser than the ideal crystal. This is explained by an incorporation of additional oxygen in the bixbyite structure, possibly into constitutional vacancies. Upon annealing, the lattice relaxes, however, the additional oxygen remains in the films. A model of oxygen segregation into grain boundaries is developed, that could also explain the grain–subgrain structure sometimes reported for ITO films.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1287603