Epitaxial Fe films on GaAs(001): Does the substrate surface reconstruction affect the uniaxial magnetic anisotropy?

• Published in: Journal of applied physics 2002-05, Vol.91 (10), p.8757-8759
• Main Authors: Moosbühler, R., Bensch, F., Dumm, M., Bayreuther, G.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.1447205

The in-plane magnetic anisotropy of Fe films epitaxially grown on GaAs(001), in addition to a thickness-dependent four-fold contribution has a uniaxial component originating from the Fe/GaAs interface. This has been observed in several previous investigations. The orientation of the uniaxial easy axis (e.a.), however, was found to be along the [110] direction in most studies, but also an e.a. parallel to [−110] was reported in a few cases. It has been suggested that different reconstructions of the GaAs surface prior to Fe deposition could be responsible for this discrepancy. In the present contribution, it is shown that in Fe(001) films grown by molecular-beam epitaxy on Ga-rich GaAs(001) surfaces at room temperature the uniaxial anisotropy always has its easy axis along [110] with practically the same magnitude. In particular, the surface reconstruction of the GaAs substrate — either (4×2) or (2×6) — has no effect on the resulting uniaxial magnetic anisotropy. This [together with recent results related to the phase transition of Fe/GaAs(001)] suggests that the same atomic configuration is formed at the Fe/GaAs(001) interface in both cases connected with the segregation of a certain amount of As (and Ga) to the surface.