Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion

It has been demonstrated that, by incorporating a thin ∼20 nm Si1−yCy (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si1−yCy layer was grown epitaxially followed...

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Bibliographic Details
Published in:Applied physics letters 2003-11, Vol.83 (20), p.4169-4171
Main Authors: Tan, Chung Foong, Chor, Eng Fong, Liu, Jinping, Lee, Hyeokjae, Quek, Elgin, Chan, Lap
Format: Article
Language:English
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Summary:It has been demonstrated that, by incorporating a thin ∼20 nm Si1−yCy (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated. The Si1−yCy layer was grown epitaxially followed by a silicon epitaxy cap of 60 nm. Indium implantations were performed at 1×1014 cm−2 at 115 keV followed by spike annealing at 1050 °C. The experimentally observed EOR defect and enhanced diffusion elimination are explained based on the undersaturation of implantation-induced silicon interstitials with the presence of substitutional carbon at the Si1−yCy layer.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1628814