On the influence of short and medium range order on the material band gap in hydrogenated amorphous silicon

• Published in: Journal of applied physics 2004-10, Vol.96 (7), p.3818-3826
• Main Authors: Mahan, A. H., Biswas, R., Gedvilas, L. M., Williamson, D. L., Pan, B. C.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.1772876

We examine different types of order measured in hydrogenated amorphous silicon (a-Si:H) and their effect on the optical absorption (band gap). We first review previous experimental work determining order on a short-range scale as probed by Raman spectroscopy, and provide, using molecular dynamics simulations, a theoretical explanation for why the band gap increases when this type of ordering is improved. We then present results on a-Si:H films deposited by hot wire chemical vapor deposition (CVD) and plasma enhanced CVD where the short-range order, from Raman spectroscopy, does not change, but order on a larger or medium-range scale does. This order is determined by measuring the width of the first x-ray diffraction peak, and was varied by depositing films at different substrate temperatures and∕or different hydrogen dilutions. We find that the film band gap also increases when this type of ordering improves, and we provide a possible mechanism to explain these trends. We also suggest that much of the previous literature showing an increase in band gap with increasing film hydrogen content should be treated with caution, as these works may not have accurately deconvoluted the effects of optical adsorption due to film hydrogenation from those due to both types of lattice ordering. Finally, we argue that this same trend may apply, to a limited extent, to microcrystalline silicon.