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Surface passivation of InAs(001) with thioacetamide
We describe the passivation of InAs(001) surfaces with thioacetamide ( CH 3 CSNH 2 or TAM) as an alternative to the standard sulfur passivation using inorganic sulfide ( NH 4 ) 2 S x . Quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that TAM passivation dramatically...
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| Published in: | Applied physics letters 2005-06, Vol.86 (24), p.242105-242105-3 |
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| Main Authors: | , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c283t-50d4af7e3587c2040e3c145b7bd6b22a272d56801a65f243d953437627eb3af43 |
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| cites | cdi_FETCH-LOGICAL-c283t-50d4af7e3587c2040e3c145b7bd6b22a272d56801a65f243d953437627eb3af43 |
| container_end_page | 242105-3 |
| container_issue | 24 |
| container_start_page | 242105 |
| container_title | Applied physics letters |
| container_volume | 86 |
| creator | Petrovykh, D. Y. Long, J. P. Whitman, L. J. |
| description | We describe the passivation of InAs(001) surfaces with thioacetamide (
CH
3
CSNH
2
or TAM) as an alternative to the standard sulfur passivation using inorganic sulfide
(
NH
4
)
2
S
x
. Quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that TAM passivation dramatically improves the stability against reoxidation in air compared with the inorganic sulfide, with little to no etching during the treatment. We find that TAM passivation preserves the intrinsic surface charge accumulation layer, as directly confirmed with laser-induced photoemission. Overall, TAM appears to provide superior passivation for electronic device and sensing applications. |
| doi_str_mv | 10.1063/1.1946182 |
| format | article |
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CH
3
CSNH
2
or TAM) as an alternative to the standard sulfur passivation using inorganic sulfide
(
NH
4
)
2
S
x
. Quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that TAM passivation dramatically improves the stability against reoxidation in air compared with the inorganic sulfide, with little to no etching during the treatment. We find that TAM passivation preserves the intrinsic surface charge accumulation layer, as directly confirmed with laser-induced photoemission. Overall, TAM appears to provide superior passivation for electronic device and sensing applications.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1946182</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-06, Vol.86 (24), p.242105-242105-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c283t-50d4af7e3587c2040e3c145b7bd6b22a272d56801a65f243d953437627eb3af43</citedby><cites>FETCH-LOGICAL-c283t-50d4af7e3587c2040e3c145b7bd6b22a272d56801a65f243d953437627eb3af43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.1946182$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,778,780,791,27901,27902,76125</link.rule.ids></links><search><creatorcontrib>Petrovykh, D. Y.</creatorcontrib><creatorcontrib>Long, J. P.</creatorcontrib><creatorcontrib>Whitman, L. J.</creatorcontrib><title>Surface passivation of InAs(001) with thioacetamide</title><title>Applied physics letters</title><description>We describe the passivation of InAs(001) surfaces with thioacetamide (
CH
3
CSNH
2
or TAM) as an alternative to the standard sulfur passivation using inorganic sulfide
(
NH
4
)
2
S
x
. Quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that TAM passivation dramatically improves the stability against reoxidation in air compared with the inorganic sulfide, with little to no etching during the treatment. We find that TAM passivation preserves the intrinsic surface charge accumulation layer, as directly confirmed with laser-induced photoemission. Overall, TAM appears to provide superior passivation for electronic device and sensing applications.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1z01LAzEQxvEgCq7Vg99gj_awdSaTl92Dh1J8KRQ8qOeQzSY0YrtlExW_vavtwYunYeDPAz_GLhFmCIqucYaNUFjzI1YgaF0RYn3MCgCgSjUST9lZSq_jKzlRwejpfQjW-XJnU4ofNsd-W_ahXG7n6QoAp-VnzOsyr2M_VtluYufP2Umwb8lfHO6EvdzdPi8eqtXj_XIxX1WO15QrCZ2wQXuStXYcBHhyKGSr2061nFuueSdVDWiVDFxQ10gSpBXXviUbBE3YdL_rhj6lwQezG-LGDl8GwfxoDZqDdmxv9m1yMf8q_o8PZPOHTN9VLFmm</recordid><startdate>20050613</startdate><enddate>20050613</enddate><creator>Petrovykh, D. Y.</creator><creator>Long, J. P.</creator><creator>Whitman, L. J.</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050613</creationdate><title>Surface passivation of InAs(001) with thioacetamide</title><author>Petrovykh, D. Y. ; Long, J. P. ; Whitman, L. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c283t-50d4af7e3587c2040e3c145b7bd6b22a272d56801a65f243d953437627eb3af43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Petrovykh, D. Y.</creatorcontrib><creatorcontrib>Long, J. P.</creatorcontrib><creatorcontrib>Whitman, L. J.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Petrovykh, D. Y.</au><au>Long, J. P.</au><au>Whitman, L. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Surface passivation of InAs(001) with thioacetamide</atitle><jtitle>Applied physics letters</jtitle><date>2005-06-13</date><risdate>2005</risdate><volume>86</volume><issue>24</issue><spage>242105</spage><epage>242105-3</epage><pages>242105-242105-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We describe the passivation of InAs(001) surfaces with thioacetamide (
CH
3
CSNH
2
or TAM) as an alternative to the standard sulfur passivation using inorganic sulfide
(
NH
4
)
2
S
x
. Quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that TAM passivation dramatically improves the stability against reoxidation in air compared with the inorganic sulfide, with little to no etching during the treatment. We find that TAM passivation preserves the intrinsic surface charge accumulation layer, as directly confirmed with laser-induced photoemission. Overall, TAM appears to provide superior passivation for electronic device and sensing applications.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1946182</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2005-06, Vol.86 (24), p.242105-242105-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_1946182 |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); American Institute of Physics |
| title | Surface passivation of InAs(001) with thioacetamide |
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