Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5 μ m

We designed and prepared by molecular beam epitaxy strain-engineered InAs ∕ InGaAs ∕ GaAs quantum dot (QD) nanostructures where we separately controlled: (i) the mismatch f between QDs and confining layers (CLs), and, then, the QD strain, by changing the thickness of a partially relaxed InGaAs lower...

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Bibliographic Details
Published in:Applied physics letters 2005-08, Vol.87 (6), p.063101-063101-3
Main Authors: Seravalli, L., Frigeri, P., Minelli, M., Allegri, P., Avanzini, V., Franchi, S.
Format: Article
Language:English
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Summary:We designed and prepared by molecular beam epitaxy strain-engineered InAs ∕ InGaAs ∕ GaAs quantum dot (QD) nanostructures where we separately controlled: (i) the mismatch f between QDs and confining layers (CLs), and, then, the QD strain, by changing the thickness of a partially relaxed InGaAs lower CL and (ii) the CL composition x . The appropriate values of f and x to tune the emission energies at wavelengths in the 1.3 - 1.55 μ m range were calculated by means of a simple model. Comparing model calculations and activation energies of photoluminescence quenching, we also concluded that quenching is due to both intrinsic and extrinsic processes; we show that the structures can be designed so as to maximize the activation energy of the intrinsic process, while keeping the emission energy at the intended value in the 1.3 - 1.55 μ m range.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2007860