Impact of Zr addition on properties of atomic layer deposited HfO2

The impact of Zr addition on microstructure of HfO2 after high temperature processing was investigated using Rutherford backscattering, x-ray diffraction (XRD), transmission electron microscopy, and atomic force microscopy (AFM). The ZrO2 content in the films was varied from ∼25% to 75%. XRD analysi...

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Bibliographic Details
Published in:Applied physics letters 2006-05, Vol.88 (22)
Main Authors: Triyoso, D. H., Hegde, R. I., Schaeffer, J. K., Roan, D., Tobin, P. J., Samavedam, S. B., White, B. E., Gregory, R., Wang, X.-D.
Format: Article
Language:English
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Summary:The impact of Zr addition on microstructure of HfO2 after high temperature processing was investigated using Rutherford backscattering, x-ray diffraction (XRD), transmission electron microscopy, and atomic force microscopy (AFM). The ZrO2 content in the films was varied from ∼25% to 75%. XRD analysis shows that adding >50% ZrO2 leads to partial stabilization of tetragonal phase of the HfxZr1−xO2 alloy. AFM images revealed smaller grains with Zr addition. Conducting AFM showed more uniform and tighter tunneling current distribution in HfxZr1−xO2 compared to HfO2. Constant capacitance-voltage stressing performed on HfO2 and HfxZr1−xO2 metal-oxide-semiconductor capacitors indicated reduced charge trapping with Zr addition.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2208558