Improving the stability of organic light-emitting devices by using a hole-injection-tunable-anode-buffer-layer

Introducing a hole-injection-tunable-anode-buffer-layer (HITABL) at the indium tin oxide anode contact of an organic light-emitting device can finely tune hole injection to establish proper charge balance, thus remarkably improves its operational stability. The HITABL consists of two sublayers: (i)...

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Bibliographic Details
Published in:Journal of applied physics 2007-03, Vol.101 (5)
Main Authors: Luo, Yichun, Aziz, Hany, Xu, Gu, Popovic, Zoran D.
Format: Article
Language:English
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Summary:Introducing a hole-injection-tunable-anode-buffer-layer (HITABL) at the indium tin oxide anode contact of an organic light-emitting device can finely tune hole injection to establish proper charge balance, thus remarkably improves its operational stability. The HITABL consists of two sublayers: (i) an ∼2.5nm thick metal (e.g., Ca, Mg, or Ag) sublayer and (ii) an ∼10nm thick tetrafluorotetracyanoquinodimethane (F4TCNQ) doped N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine sublayer. Hole injection can be tuned by changing (i) the metal in the first sublayer and/or (ii) the concentration of the F4TCNQ dopant in the second sublayer. The choice of the metal used in the first sublayer and/or the concentration of F4TCNQ in the second sublayer affect the hole-injection efficiency. Therefore, by using the HITABL, one can make the necessary diminutive adjustments to the hole injection of a device and achieve proper charge balance, resulting in a significant improvement in operational stability.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.2472254