Damage production in GaAs by H+ irradiation

Rutherford backscattering and proton induced x-ray emission in combination with channeling have been used to study damage production in GaAs by proton irradiation. The average cross section for displacement of Ga and As atoms has been determined and found to agree well with the cross section calcula...

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Bibliographic Details
Published in:Journal of applied physics 1983-01, Vol.54 (9), p.5039-5042
Main Author: BHATTACHARYA, R. S
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Ion radiation effects
Physical radiation effects, radiation damage
Physics
Structure of solids and liquids
crystallography
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Summary:Rutherford backscattering and proton induced x-ray emission in combination with channeling have been used to study damage production in GaAs by proton irradiation. The average cross section for displacement of Ga and As atoms has been determined and found to agree well with the cross section calculated from the elastic displacement theory of Kinchin and Pease. In addition, we have demonstrated that about 6% more Ga atoms are displaced than As atoms.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.332774