Room-temperature photoreflectance and photoluminescence of heavily Si-doped GaAs

Room-temperature photoreflectance (PR) and photoluminescence (PL) spectra in heavily n-doped GaAs were compared. It was found that for highly degenerate semiconductors the critical energy measured by the PR equals to the peak energy of the PL spectrum. When Fermi level lies below the conduction-band...

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Bibliographic Details
Published in:Journal of applied physics 1995-06, Vol.77 (12), p.6727-6729
Main Authors: Lee, Chul, Lee, Nam-Young, Lee, Kyu-Jang, Kim, Jae-Eun, Park, Hae Yong, Kwak, Dong-Hwa, Lee, Hee Chul, Lim, H.
Format: Article
Language:English
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Summary:Room-temperature photoreflectance (PR) and photoluminescence (PL) spectra in heavily n-doped GaAs were compared. It was found that for highly degenerate semiconductors the critical energy measured by the PR equals to the peak energy of the PL spectrum. When Fermi level lies below the conduction-band minimum, the PR spectra revealed the band-gap energy as well as the energy Emax at which the electron concentration per unit energy in the donor band becomes maximum, and this maximum was observed to merge in the conduction-band at about 3×1017 cm−3 electron concentration.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.359090