The enthalpy of formation of thin film titanium disilicide

Solid state reactions between thin films of titanium and amorphous silicon (a-Si) were studied using differential scanning calorimetry. Multilayered diffusion couples were heated from just above room temperature to 900 K while monitoring the heat flow from the sample during the reaction. From analys...

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Bibliographic Details
Published in:Journal of applied physics 1997-08, Vol.82 (3), p.1488-1490
Main Authors: Kasica, R. J., Cotts, E. J.
Format: Article
Language:English
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Summary:Solid state reactions between thin films of titanium and amorphous silicon (a-Si) were studied using differential scanning calorimetry. Multilayered diffusion couples were heated from just above room temperature to 900 K while monitoring the heat flow from the sample during the reaction. From analysis of our data we have calculated the enthalpy of formation to be ΔHf=−62±5 kJ/mol for the reaction, a-Si+Ti→C49−TiSi2 and have subsequently estimated the heat evolved during the reaction c-Si+Ti→C54−TiSi2 as ΔHf=−56±5 kJ/mol. Based upon this estimate, we find the enthalpy as determined from thin film samples for this system agrees with previous studies which made use of bulk sampling techniques.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.365930