Room-temperature anomalous Hall effect in amorphous Si-based magnetic semiconductor

Here, we show that Mn-doped amorphous hydrogenated Si reveals room-temperature ferromagnetism. Various characterization techniques rule out the formation of magnetic clusters. In particular, anomalous Hall-effect is found even at 300K in annealed Si 89.5 Mn 10.5 samples. The observed anomalous Hall-...

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Bibliographic Details
Published in:Applied physics letters 2012-02, Vol.100 (9), p.092404-092404-4
Main Authors: Yao, Jia-Hsien, Lin, Hsiu-Hau, Soo, Yun-Liang, Wu, Tai-Sing, Tsai, Jai-Lin, Lan, Ming-Der, Chin, Tsung-Shune
Format: Article
Language:English
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Summary:Here, we show that Mn-doped amorphous hydrogenated Si reveals room-temperature ferromagnetism. Various characterization techniques rule out the formation of magnetic clusters. In particular, anomalous Hall-effect is found even at 300K in annealed Si 89.5 Mn 10.5 samples. The observed anomalous Hall-effect provides direct evidence that the ferromagnetic order is coupled to the itinerant carriers, making these samples workable magnetic semiconductors. This work demonstrates the great potential for Si-based semiconductor spintronics at room temperature, which is readily integrated with the current information technology.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3691173