High-resolution photocurrent microscopy using near-field cathodoluminescence of quantum dots

We report a fast, versatile photocurrent imaging technique to visualize the local photo response of solar energy devices and optoelectronics using near-field cathodoluminescence (CL) from a homogeneous quantum dot layer. This approach is quantitatively compared with direct measurements of high-resol...

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Bibliographic Details
Published in:AIP advances 2013-06, Vol.3 (6), p.062112-062112
Main Authors: Yoon, Heayoung P., Lee, Youngmin, Bohn, Christopher D., Ko, Seung-Hyeon, Gianfrancesco, Anthony G., Steckel, Jonathan S., Coe-Sullivan, Seth, Talin, A. Alec, Zhitenev, Nikolai B.
Format: Article
Language:English
Subjects:
Cathodoluminescence
Devices
Grain boundaries
Imaging
Photocurrent
Photoelectric effect
Photons
Quantum dots
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Summary:We report a fast, versatile photocurrent imaging technique to visualize the local photo response of solar energy devices and optoelectronics using near-field cathodoluminescence (CL) from a homogeneous quantum dot layer. This approach is quantitatively compared with direct measurements of high-resolution Electron Beam Induced Current (EBIC) using a thin film solar cell (n-CdS / p-CdTe). Qualitatively, the observed image contrast is similar, showing strong enhancement of the carrier collection efficiency at the p-n junction and near the grain boundaries. The spatial resolution of the new technique, termed Q-EBIC (EBIC using quantum dots), is determined by the absorption depth of photons. The results demonstrate a new method for high-resolution, sub-wavelength photocurrent imaging measurement relevant for a wide range of applications.
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4811275