Nucleation and growth of atomically thin hexagonal boron nitride on Ni/MgO(111) by molecular beam epitaxy

Scalable fabrication of atomically thin hexagonal boron nitride (h-BN) films is highly important for the future implementation of this two-dimensional dielectric in various applications. In this contribution, we report on systematical growth experiments of few-layer thick h-BN, synthesized by molecu...

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Bibliographic Details
Published in:Journal of applied physics 2019-03, Vol.125 (11)
Main Authors: Nakhaie, Siamak, Heilmann, Martin, Krause, Thilo, Hanke, Michael, Lopes, J. Marcelo J.
Format: Article
Language:English
Subjects:
Applied physics
Atomic force microscopy
Boron nitride
Chemical synthesis
Epitaxial growth
Magnesium oxide
Microscopy
Molecular beam epitaxy
Nucleation
Raman spectroscopy
Scanning electron microscopy
Thickness
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Summary:Scalable fabrication of atomically thin hexagonal boron nitride (h-BN) films is highly important for the future implementation of this two-dimensional dielectric in various applications. In this contribution, we report on systematical growth experiments of few-layer thick h-BN, synthesized by molecular beam epitaxy (MBE), on crystalline Ni films deposited on MgO(111). The samples are studied using scanning electron microscopy, atomic force microscopy, Raman spectroscopy, and synchrotron-based grazing incidence diffraction. Growth parameters for the realization of continuous h-BN films with high structural quality are presented and discussed. Additionally, our study also aims at gaining insight into the nucleation and growth behavior of h-BN on the Ni surface, which is crucial for achieving further improvement in terms of crystal quality and thickness homogeneity of h-BN layers grown not only by MBE but also by other methods.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5081806