Spin pumping and laser modulated inverse spin Hall effect in yttrium iron garnet/germanium heterojunctions

In this work, undoped semiconductors, germanium (Ge) and germanium tin (GeSn), were grown on ferrimagnetic insulator yttrium iron garnet (YIG) thin films using ultra-high vacuum molecular beam epitaxy. The crystallinity of the structure was determined from x-ray diffraction and high-resolution trans...

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Bibliographic Details
Published in:Applied physics letters 2020-03, Vol.116 (12)
Main Authors: Jin, Lichuan, Zhu, Hongyu, Zhang, Dainan, Liu, Bo, Meng, Hao, Tang, Xiaoli, Li, MingMing, Zhong, Zhiyong, Zhang, Huaiwu
Format: Article
Language:English
Subjects:
Applied physics
Broadband
Current injection
Damping
Electrons
Ferrimagnetism
Ferromagnetic resonance
Ferromagnetism
Germanium
Hall effect
Heavy metals
Heterojunctions
High vacuum
Infrared lasers
Intermetallic compounds
Iron
Laser pumping
Lasers
Molecular beam epitaxy
Platinum
Spintronics
Temperature effects
Thin films
Yttrium
Yttrium-iron garnet
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Summary:In this work, undoped semiconductors, germanium (Ge) and germanium tin (GeSn), were grown on ferrimagnetic insulator yttrium iron garnet (YIG) thin films using ultra-high vacuum molecular beam epitaxy. The crystallinity of the structure was determined from x-ray diffraction and high-resolution transmission electron microscopy combined with energy dispersive x-ray spectroscopy. Both spin pumping and inverse spin Hall effects (ISHEs) of YIG/Ge and YIG/GeSn heterojunctions have been investigated with the help of broadband ferromagnetic resonance (FMR). We observe that the spin mixing conductances of YIG/Ge (60 nm) and YIG/GeSn (60 nm) are 5.4 × 1018 m−2 and 7.2 × 1018 m−2, respectively, responsible for giant spin current injection. Furthermore, it is found that spin pumping injects giant spin current from ferrimagnetic YIG into the Ge semiconductor. The infrared laser modulated ISHE was examined using heavy metal platinum as a spin current collector. Also, it has been noted that the variation in the power of laser irradiation significantly changed the ISHE voltage of YIG/Ge/Pt spin junctions, saturated magnetization, FMR linewidth, and Gilbert damping parameter of YIG, which could be attributed to the laser-induced thermal effect. The outcomes from this study are promising for the development of Ge-based spintronic and magnonic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5141400