Low pressure chemical vapor deposition of titanium silicide

• Published in: Applied physics letters 1985-01, Vol.46 (2), p.189-191
• Main Authors: TEDROW, P. K, IIDEREM, V, REIF, R
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Physics
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.95679

The low pressure chemical vapor deposition (LPCVD) of titanium silicide is reported here for the first time. X-ray diffraction spectra show that the as-deposited films are polycrystalline and TiSi2 is the predominant phase. The as-deposited films had resistivities of 22 to 39 μΩ cm with film thicknesses ranging from 2000 to 15 500 Å, and Si/Ti ratios of 1.8 to 2.3 as determined by Rutherford backscattering spectroscopy. Auger analyses did not detect any impurities such as oxygen and carbon in these films. The LPCVD system consists of a cold wall reactor with the wafer being heated externally by infrared lamps. The reactor is capable of sequential deposition of polycrystalline silicon (polysilicon) and silicide films; moreover, the final annealing step, if necessary, can be performed in situ. Care has been taken to provide a clean environment by using a turbomolecular pump which is capable of keeping the base pressure of the reactor ≤10−7 Torr. We have deposited in situ sequential films of polysilicon and titanium silicide in this system. The silicide films were deposited by reacting SiH4 with TiCl4.