Realization-dependent model of hopping transport in disordered media

At low injection or low temperatures, electron transport in disordered semiconductors is dominated by phonon-assisted hopping between localized states. A very popular approach to this hopping transport is the Miller–Abrahams model that requires a set of empirical parameters to define the hopping rat...

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Bibliographic Details
Published in:Applied physics letters 2023-12, Vol.123 (25)
Main Authors: Thayil, Abel, Filoche, Marcel
Format: Article
Language:English
Subjects:
Applied physics
Computation
Condensed Matter
Current carriers
Disordered Systems and Neural Networks
Electron transport
Geodesy
Low temperature
Physics
Schrodinger equation
Temperature dependence
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Summary:At low injection or low temperatures, electron transport in disordered semiconductors is dominated by phonon-assisted hopping between localized states. A very popular approach to this hopping transport is the Miller–Abrahams model that requires a set of empirical parameters to define the hopping rates and the preferential paths between the states. We present here a transport model based on the localization landscape (LL) theory in which the location of the localized states, their energies, and the coupling between them are computed for any specific realization, accounting for its particular geometry and structure. This model unveils the transport network followed by the charge carriers that essentially consists in the geodesics of a metric deduced from the LL. The hopping rates and mobility are computed on a paradigmatic example of disordered semiconductor and compared with the prediction from the actual solution of the Schrödinger equation. We explore the temperature-dependency for various disorder strengths and demonstrate the applicability of the LL theory in efficiently modeling hopping transport in disordered systems.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0177082