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Powerful highly efficient KrF lamps excited by surface and barrier discharges
An investigation was made of the characteristics of KrF lamps with different types of excitation by surface and barrier discharges in which the dielectric material was sapphire. The conditions were determined for the attainment of an extremely high yield of the KrF* fluorescence with the internal ef...
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Published in: | Quantum electronics (Woodbury, N.Y.) N.Y.), 1998-04, Vol.28 (4), p.297-303 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | An investigation was made of the characteristics of KrF lamps with different types of excitation by surface and barrier discharges in which the dielectric material was sapphire. The conditions were determined for the attainment of an extremely high yield of the KrF* fluorescence with the internal efficiency {eta}{sub in{approx}}30 % and 22% for pulsed surface and barrier discharges, respectively. A homogeneous surface discharge was maintained without gas circulation when the pulse repetition rate was 5 x 10{sup 4} Hz. Quasicontinuous excitation of a surface discharge at near-atmospheric pressure made it possible to reach a KrF* fluorescence power density of about 80 W cm{sup -3}, which was close to the limit set by the kinetics of the gaseous medium. Under prolonged excitation conditions the intensity of the UV output radiation was limited by the permissible heating of the gas to a temperature above which the operating life of the gaseous mixture containing fluorine fell steeply. This was the reason for the advantage of surface over barrier discharges: the former were characterised by a high thermal conductivity of a thin ({approx}0.2 mm) plasma layer on the surface of the cooled dielectric, which made it possible to construct powerful highly efficient KrF and ArF lamps emitting UV radiation of up to 1 W cm{sup -2} intensity. (laser system components) |
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ISSN: | 1063-7818 1468-4799 |
DOI: | 10.1070/QE1998v028n04ABEH001195 |