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Controlled ion track etching
It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e. by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely th...
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Published in: | Radiation effects and defects in solids 2006-03, Vol.161 (3), p.161-175 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | It is a common practice since long to follow the ion track-etching process in thin foils via conductometry, i.e. by measurement of the electrical current which passes through the etched track, once the track breakthrough condition has been achieved. The major disadvantage of this approach, namely the absence of any major detectable signal before breakthrough, can be avoided by examining the track-etching process capacitively. This method allows one to define precisely not only the breakthrough point before it is reached, but also the length of any non-transient track. Combining both capacitive and conductive etching allows one to control the etching process perfectly. Examples and possible applications are given. |
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ISSN: | 1042-0150 1029-4953 |
DOI: | 10.1080/10420150600574119 |