Impact of process variability in junctionless FinFETs due to random dopant fluctuation, gate work function variation, and oxide thickness variation

In this paper, process variability such as random dopant fluctuation (RDF), work function variation (WFV), and oxide thickness variation (OTV) in 14 nm node junctionless (JL) FinFETs is investigated using the impedance field method (IFM). Effects of doping concentration, gate metal grain-related par...

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Bibliographic Details
Published in:Semiconductor science and technology 2020-03, Vol.35 (3), p.35015
Main Authors: Bae, Min Soo, Yun, Ilgu
Format: Article
Language:English
Subjects:
impedance field method
junctionless FinFET
metal grain
oxide thickness variation
process variability
random dopant fluctuation
work function variation
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Summary:In this paper, process variability such as random dopant fluctuation (RDF), work function variation (WFV), and oxide thickness variation (OTV) in 14 nm node junctionless (JL) FinFETs is investigated using the impedance field method (IFM). Effects of doping concentration, gate metal grain-related parameters, and device parameter scaling on RDF, WFV, and OTV induced variability are studied using the standard deviations of threshold voltage ( Vth) and subthreshold slope ( Ssub). As a result, we find that a relatively low doping concentration helps alleviate process variability. As average grain size increases, different mechanisms of Vth and Ssub degradation are analyzed for WFV and OTV induced variability. Compared to WFV and OTV, RDF is revealed as the most significant source of variability as devices scale down. It is observed that fin width (Wfin) and oxide thickness (tox) scaling leads to the reduction of RDF induced variability, whereas channel length (L) and fin height (Hfin) scaling results in aggravation of RDF, WFV, and OTV induced variability.
ISSN:0268-1242
1361-6641
DOI:10.1088/1361-6641/ab6bfb