Low-voltage low-power CMOS-RF transceiver design

Research over the last ten years has resulted in attempts toward single-chip CMOS RF circuits for Bluetooth, global positioning system, digital enhanced cordless telecommunications and cellular applications. An overview of the use of CMOS for low-cost integration of a high-end cellular RF transceive...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2002-01, Vol.50 (1), p.281-287
Main Authors: Steyaert, M.S.J., De Muer, B., Leroux, P., Borremans, M., Mertens, K.
Format: Article
Language:English
Subjects:
Band pass filters
Cellular
Circuits
CMOS
CMOS technology
Costs
Design engineering
Impedance
Integrated circuit technology
Low-noise amplifiers
Microwaves
Optimization
Radio frequencies
Radio frequency
Space technology
Transceivers
Very large scale integration
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Summary:Research over the last ten years has resulted in attempts toward single-chip CMOS RF circuits for Bluetooth, global positioning system, digital enhanced cordless telecommunications and cellular applications. An overview of the use of CMOS for low-cost integration of a high-end cellular RF transceiver front-end is presented. Some fundamental pitfalls and limitations of RF CMOS are discussed. To circumvent these obstacles, the choice of transceiver architecture, circuit topology design, and systematic optimization of the different transceiver blocks is necessary. Moreover, optimization of the transceiver as one single block by minimizing the number of power-hungry interface circuits is emphasized. As examples, a fully integrated cellular transceiver front-end, a low-power extremely low noise-figure low-noise amplifier, and a very efficient power amplifier are demonstrated.
ISSN:0018-9480
1557-9670
DOI:10.1109/22.981281