SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junction is optimized with lightly-doped-drain and...

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Bibliographic Details
Published in:	IEEE journal of selected topics in quantum electronics 2024-01, Vol.30 (1: Single-Photon Technologies and Applications), p.1-10
Main Authors:	Ha, Won-Yong, Park, Eunsung, Eom, Doyoon, Park, Hyo-Sung, Gramuglia, Francesco, Keshavarzian, Pouyan, Kizilkan, Ekin, Bruschini, Claudio, Chong, Daniel, Tan, Shyue Seng, Tng, Michelle, Quek, Elgin, Charbon, Edoardo, Choi, Woo-Young, Lee, Myung-Jae
Format:	Article
Language:	English
Subjects:	Avalanche diodes Avalanche photodiode (APD) Avalanche photodiodes Bias bipolar-CMOS-DMOS (BCD) technology Breakdown CMOS detector Electric breakdown electronic photonic integration fluorescence correlation spectroscopy (FCS) fluorescence lifetime imaging microscopy (FLIM) frontside illumination (FSI) Geiger-mode avalanche photodiode (G-APD) high-volume manufacturing integrated optics device integration of photonics in standard CMOS technology Junctions Multilayers optical sensing optical sensor photodetector photodiode photomultiplier Photon avalanches photon counting photon timing Photonics Photons semiconductor Semiconductor device measurement Semiconductor devices sensor Sensors silicon single-photon avalanche diode (SPAD) Single-photon avalanche diodes single-photon counting single-photon imaging Spectroscopy standard CMOS technology Temperature measurement Timing jitter
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