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Are Crossbar Memories Secure? New Security Vulnerabilities in Crossbar Memories
Memristors are emerging Non-Volatile Memories (NVMs) that are promising for building future memory systems. Unlike DRAM, memristors are non-volatile, i.e., they can retain data after power loss. In contrast to DRAM where each cell is associated with a pass transistor, memristor cells can be implemen...
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Published in: | IEEE computer architecture letters 2019-07, Vol.18 (2), p.174-177 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Memristors are emerging Non-Volatile Memories (NVMs) that are promising for building future memory systems. Unlike DRAM, memristors are non-volatile, i.e., they can retain data after power loss. In contrast to DRAM where each cell is associated with a pass transistor, memristor cells can be implemented without such transistor, and hence enable high density ReRAM systems. Moreover, memristors leverage a unique crossbar architecture to improve the density of memory modules. Memristors have been considered to build future data centers with both energy-efficiency and high memory capacity goals. Surprisingly, we observe that using memristors in multi-tenant environments, e.g., cloud systems, entails new security vulnerabilities. In particular, the crossbar contents can severely affect the write latency of any data cells within the same crossbar. With various memory interleaving options (to optimize performance), a single crossbar might be shared among several applications/users from different security domains. Therefore, such content-dependent latency can open new source of information leakage. In this article, we describe the information leakage problem in memristor crossbar arrays (MCAs), discuss how they can be potentially exploited from application level. Our work highlights the need for future research to mitigate (and potentially eliminate) information leakage in crossbar memories in future computing systems. |
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ISSN: | 1556-6056 1556-6064 |
DOI: | 10.1109/LCA.2019.2952111 |